This newly emerged self-powered sensor would offer a new platform for lower power consumption sensor for human–machine interface and intelligent robot.Įlectronic skins (E-skin) 1 emerged as electronic devices and electronic systems with powerful multi-functions of in-time sensing, storing data, tailoring, feedback, have significantly promoted the progress and reformation of society. The working principle of the GFET was based on the coupling effects of the FET and the TENG. Furthermore, with regards to the configuration of FET, we continued previous work: using the electrolyte gate dielectrics of FET-ion gel as the electrification layer to achieve high efficient, compact and extensively adoption for mechanosensation. For bifunctional sensor, to harness the difficult for reflecting the magnitude of frequency, we resorted to synaptic transistors to achieve more intelligentization. To achieve lower energy consumption, a promising energy-harvesting style of triboelectric nanogenerators (TENG) is incorporated into the field effect transistors (FETs) to play the important role for sensor.
The lower energy consumption and multiple functions are the imperative requirements to spurred scientists and mechanists to make joint efforts to meet.
With the development of material science, micro-nano-fabrication and microelectronics, the higher level requirements are posed on the electronic skins (E-skin).
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